1.Gate field effects on the topological insulator BiSbTeSe2 interface

Liu, SL, Xu, Y, Wang     More...

Liu, SL, Xu, Y, Wang, YP, Chen, YP, Fry, JN, Cheng, HP     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2020, Volume 116, Issue 3,

收錄情况： WOS SCOPUS

WOS核心合集引用: 6  2022影響因子:  4.0  发表年影響因子:  3.791 

2.Increased Curie temperature and enhanced perpendicular magneto anisotropy of Cr2Ge2Te6/NiO heterostructures

Idzuchi, H, Allcca,     More...

Idzuchi, H, Allcca, AEL, Pan, XC, Tanigaki, K, Chen, YP     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2019, Volume 115, Issue 23,

收錄情况： WOS SCOPUS

WOS核心合集引用: 42  2022影響因子:  4.0  发表年影響因子:  3.597 

3.Gate-tunable supercurrent and multiple Andreev reflections in a superconductor-topological insulator nanoribbon-superconductor hybrid device

Jauregui, LA, Kayyal     More...

Jauregui, LA, Kayyalha, M, Kazakov, A, Miotkowski, I, Rokhinson, LP, Chen, YP     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2018, Volume 112, Issue 9,

收錄情况： WOS SCOPUS

WOS核心合集引用: 20  2022影響因子:  4.0  发表年影響因子:  3.521 

4.Absence of coupled thermal interfaces in Al2O3/Ni/Al2O3 sandwich structure

Li, XY, Park, W, Che     More...

Li, XY, Park, W, Chen, YP, Ruan, XL     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2017, Volume 111, Issue 14,

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WOS核心合集引用: 0  2022影響因子:  4.0  发表年影響因子:  3.495 

5.Modulation of graphene field effect by heavy charged particle irradiation

Cazalas, E, Sarker,     More...

Cazalas, E, Sarker, BK, Childres, I, Chen, YP, Jovanovic, I     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2016, Volume 109, Issue 25,

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WOS核心合集引用: 7  2022影響因子:  4.0  发表年影響因子:  3.411 

6.In-surface confinement of topological insulator nanowire surface states

Chen, FW, Jauregui,     More...

Chen, FW, Jauregui, LA, Tan, YH, Manfra, M, Klimeck, G, Chen, YP, Kubis, T     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2015, Volume 107, Issue 12,

收錄情况： WOS SCOPUS

WOS核心合集引用: 11  2022影響因子:  4.0  发表年影響因子:  3.142 

7.Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates

Kayyalha, M, Chen, Y     More...

Kayyalha, M, Chen, YP     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2015, Volume 107, Issue 11,

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WOS核心合集引用: 45  2022影響因子:  4.0  发表年影響因子:  3.142 

8.Position sensitivity of graphene field effect transistors to X-rays

Cazalas, E, Sarker,     More...

Cazalas, E, Sarker, BK, Moore, ME, Childres, I, Chen, YP, Jovanovic, I     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2015, Volume 106, Issue 22,

收錄情况： WOS SCOPUS

WOS核心合集引用: 14  2022影響因子:  4.0  发表年影響因子:  3.142 

9.Electrical and thermal conductivities of reduced graphene oxide/polystyrene composites

Park, W, Hu, JN, Jau     More...

Park, W, Hu, JN, Jauregui, LA, Ruan, XL, Chen, YP     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2014, Volume 104, Issue 11,

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WOS核心合集引用: 105  2022影響因子:  4.0  发表年影響因子:  3.302 

10.Hysteretic response of chemical vapor deposition graphene field effect transistors on SiC substrates

Cazalas, E, Childres     More...

Cazalas, E, Childres, I, Majcher, A, Chung, TF, Chen, YP, Jovanovic, I     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2013, Volume 103, Issue 5,

收錄情况： WOS SCOPUS

WOS核心合集引用: 17  2022影響因子:  4.0  发表年影響因子:  3.515 

11.Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Cao, HL, Venkatasubr     More...

Cao, HL, Venkatasubramanian, R, Liu, C, Pierce, J, Yang, HR, Hasan, MZ, Wu, Y, Chen, YP     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2012, Volume 101, Issue 16,

收錄情况： WOS SCOPUS

WOS核心合集引用: 65  2022影響因子:  4.0  发表年影響因子:  3.794 

12.Temperature dependence of Raman-active optical phonons in Bi2Se3 and Sb2Te3

Kim, Y, Chen, X, Wan     More...

Kim, Y, Chen, X, Wang, Z, Shi, J, Miotkowski, I, Chen, YP, Sharma, PA, Sharma, ALL, Hekmaty, MA, Jiang, Z, Smirnov, D     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2012, Volume 100, Issue 7,

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WOS核心合集引用: 85  2022影響因子:  4.0  发表年影響因子:  3.794 

13.Thermal expansion coefficients of Bi2Se3 and Sb2Te3 crystals from 10 K to 270 K

Chen, X, Zhou, HD, K     More...

Chen, X, Zhou, HD, Kiswandhi, A, Miotkowski, I, Chen, YP, Sharma, PA, Sharma, ALL, Hekmaty, MA, Smirnov, D, Jiang, Z     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 26,

收錄情况： WOS SCOPUS

WOS核心合集引用: 92  2022影響因子:  4.0  发表年影響因子:  3.844 

14.Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

Shen, T, Wu, W, Yu,     More...

Shen, T, Wu, W, Yu, QK, Richter, CA, Elmquist, R, Newell, D, Chen, YP     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 23,

收錄情况： WOS SCOPUS

WOS核心合集引用: 30  2022影響因子:  4.0  发表年影響因子:  3.844 

15.Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Liu, X, Smith, DJ, F     More...

Liu, X, Smith, DJ, Fan, J, Zhang, YH, Cao, H, Chen, YP, Leiner, J, Kirby, BJ, Dobrowolska, M, Furdyna, JK     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 17,

收錄情况： WOS SCOPUS

WOS核心合集引用: 66  2022影響因子:  4.0  发表年影響因子:  3.844 

16.Nonlinear thermal transport and negative differential thermal conductance in graphene nanoribbons

Hu, JN, Wang, Y, Val     More...

Hu, JN, Wang, Y, Vallabhaneni, A, Ruan, XL, Chen, YP     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 11,

收錄情况： WOS SCOPUS

WOS核心合集引用: 73  2022影響因子:  4.0  发表年影響因子:  3.844 

17.Thermoelectric power of graphene as surface charge doping indicator

Sidorov, AN, Sherehi     More...

Sidorov, AN, Sherehiy, A, Jayasinghe, R, Stallard, R, Benjamin, DK, Yu, QK, Liu, ZH, Wu, W, Cao, HL, Chen, YP, Jiang, ZG, Sumanasekera, GU     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 1,

收錄情况： WOS SCOPUS

WOS核心合集引用: 31  2022影響因子:  4.0  发表年影響因子:  3.844 

18.Room temperature device performance of electrodeposited InSb nanowire field effect transistors

Das, SR, Delker, CJ,     More...

Das, SR, Delker, CJ, Zakharov, D, Chen, YP, Sands, TD, Janes, DB     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 98, Issue 24,

收錄情况： WOS SCOPUS

WOS核心合集引用: 28  2022影響因子:  4.0  发表年影響因子:  3.844 

19.Ultrafast carrier and phonon dynamics in Bi2Se3 crystals

Qi, J, Chen, X, Yu,     More...

Qi, J, Chen, X, Yu, W, Cadden-Zimansky, P, Smirnov, D, Tolk, NH, Miotkowski, I, Cao, H, Chen, YP, Wu, Y, Qiao, S, Jiang, Z     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2010, Volume 97, Issue 18,

收錄情况： WOS SCOPUS

WOS核心合集引用: 113  2022影響因子:  4.0  发表年影響因子:  3.841 

20.Effect of electron-beam irradiation on graphene field effect devices

Childres, I, Jauregu     More...

Childres, I, Jauregui, LA, Foxe, M, Tian, JF, Jalilian, R, Jovanovic, I, Chen, YP     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2010, Volume 97, Issue 17,

收錄情况： WOS SCOPUS

WOS核心合集引用: 149  2022影響因子:  4.0  发表年影響因子:  3.841