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    1.Integrated MoSe2 with n(+)p-Si photocathodes for solar water splitting with high efficiency and stability

    Huang, GP, Mao, J, F     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2018, Volume 112, Issue 1,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 22  2019影響因子:  3.597  发表年影響因子:  3.521 

    2.Schottky solar cells based on graphene nanoribbon/multiple silicon nanowires junctions

    Xie, C, Jie, JS, Nie     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2012, Volume 100, Issue 19,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 54  2019影響因子:  3.597  发表年影響因子:  3.794 

    3.Monolayer graphene film/silicon nanowire array Schottky junction solar cells

    Xie, C, Lv, P, Nie,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 13,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 101  2019影響因子:  3.597  发表年影響因子:  3.844 

    4.Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity

    Peng, QA, Jie, JS, X     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 98, Issue 12,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 25  2019影響因子:  3.597  发表年影響因子:  3.844 

    5.High-performance CdS:P nanoribbon field-effect transistors constructed with high-kappa dielectric and top-gate geometry

    Wu, D, Jiang, Y, Wan     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2010, Volume 96, Issue 12,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 34  2019影響因子:  3.597  发表年影響因子:  3.841 

    6.Silicon nanowire sensors for Hg2+ and Cd2+ ions

    Luo, LB, Jie, JS, Zh     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2009, Volume 94, Issue 19,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 73  2019影響因子:  3.597  发表年影響因子:  3.554 

    7.High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors

    Zhang, WF, He, ZB, Y     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2009, Volume 94, Issue 12,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 35  2019影響因子:  3.597  发表年影響因子:  3.554 

    8.Silicon nanowires for rechargeable lithium-ion battery anodes

    Peng, KQ, Jie, JS, Z     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2008, Volume 93, Issue 3,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 334  2019影響因子:  3.597  发表年影響因子:  3.726 

    9.Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode

    Zhang, WF, Jie, JS,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2008, Volume 92, Issue 15,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 25  2019影響因子:  3.597  发表年影響因子:  3.726 

    10.Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device

    Zhang, WF, Jie, JS,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2008, Volume 93, Issue 18,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 11  2019影響因子:  3.597  发表年影響因子:  3.726 

    11.Transport properties of single-crystal CdS nanoribbons

    Jie, JS, Zhang, WJ,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2006, Volume 89, Issue 22,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 45  2019影響因子:  3.597  发表年影響因子:  3.977 

    12.Single-crystal CdSe nanoribbon field-effect transistors and photoelectric applications

    Jie, JS, Zhang, WJ,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2006, Volume 89, Issue 13,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 57  2019影響因子:  3.597  发表年影響因子:  3.977 

    13.Synthesis and optical properties of well-aligned ZnO nanorod array on an undoped ZnO film

    Jie, JS, Wang, GZ, C     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2005, Volume 86, Issue 3, Pages 1-3

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 165  2019影響因子:  3.597  发表年影響因子:  4.127 

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