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    1.Gate field effects on the topological insulator BiSbTeSe2 interface

    Liu, SL, Xu, Y, Wang     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2020, Volume 116, Issue 3,

    收錄情况: WOS SCOPUS

    WOS核心合集引用:  2022影響因子:  4.0  发表年影響因子:  3.791 

    2.Increased Curie temperature and enhanced perpendicular magneto anisotropy of Cr2Ge2Te6/NiO heterostructures

    Idzuchi, H, Allcca,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2019, Volume 115, Issue 23,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 35  2022影響因子:  4.0  发表年影響因子:  3.597 

    3.Gate-tunable supercurrent and multiple Andreev reflections in a superconductor-topological insulator nanoribbon-superconductor hybrid device

    Jauregui, LA, Kayyal     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2018, Volume 112, Issue 9,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 20  2022影響因子:  4.0  发表年影響因子:  3.521 

    4.Absence of coupled thermal interfaces in Al2O3/Ni/Al2O3 sandwich structure

    Li, XY, Park, W, Che     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2017, Volume 111, Issue 14,

    收錄情况: WOS SCOPUS

    WOS核心合集引用:  2022影響因子:  4.0  发表年影響因子:  3.495 

    5.Modulation of graphene field effect by heavy charged particle irradiation

    Cazalas, E, Sarker,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2016, Volume 109, Issue 25,

    收錄情况: WOS SCOPUS

    WOS核心合集引用:  2022影響因子:  4.0  发表年影響因子:  3.411 

    6.In-surface confinement of topological insulator nanowire surface states

    Chen, FW, Jauregui,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2015, Volume 107, Issue 12,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 11  2022影響因子:  4.0  发表年影響因子:  3.142 

    7.Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates

    Kayyalha, M, Chen, Y     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2015, Volume 107, Issue 11,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 43  2022影響因子:  4.0  发表年影響因子:  3.142 

    8.Position sensitivity of graphene field effect transistors to X-rays

    Cazalas, E, Sarker,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2015, Volume 106, Issue 22,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 12  2022影響因子:  4.0  发表年影響因子:  3.142 

    9.Electrical and thermal conductivities of reduced graphene oxide/polystyrene composites

    Park, W, Hu, JN, Jau     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2014, Volume 104, Issue 11,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 104  2022影響因子:  4.0  发表年影響因子:  3.302 

    10.Hysteretic response of chemical vapor deposition graphene field effect transistors on SiC substrates

    Cazalas, E, Childres     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2013, Volume 103, Issue 5,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 17  2022影響因子:  4.0  发表年影響因子:  3.515 

    11.Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

    Cao, HL, Venkatasubr     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2012, Volume 101, Issue 16,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 65  2022影響因子:  4.0  发表年影響因子:  3.794 

    12.Temperature dependence of Raman-active optical phonons in Bi2Se3 and Sb2Te3

    Kim, Y, Chen, X, Wan     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2012, Volume 100, Issue 7,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 83  2022影響因子:  4.0  发表年影響因子:  3.794 

    13.Thermal expansion coefficients of Bi2Se3 and Sb2Te3 crystals from 10 K to 270 K

    Chen, X, Zhou, HD, K     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 26,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 87  2022影響因子:  4.0  发表年影響因子:  3.844 

    14.Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

    Shen, T, Wu, W, Yu,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 23,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 30  2022影響因子:  4.0  发表年影響因子:  3.844 

    15.Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

    Liu, X, Smith, DJ, F     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 17,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 64  2022影響因子:  4.0  发表年影響因子:  3.844 

    16.Nonlinear thermal transport and negative differential thermal conductance in graphene nanoribbons

    Hu, JN, Wang, Y, Val     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 11,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 67  2022影響因子:  4.0  发表年影響因子:  3.844 

    17.Thermoelectric power of graphene as surface charge doping indicator

    Sidorov, AN, Sherehi     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 1,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 31  2022影響因子:  4.0  发表年影響因子:  3.844 

    18.Room temperature device performance of electrodeposited InSb nanowire field effect transistors

    Das, SR, Delker, CJ,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 98, Issue 24,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 27  2022影響因子:  4.0  发表年影響因子:  3.844 

    19.Ultrafast carrier and phonon dynamics in Bi2Se3 crystals

    Qi, J, Chen, X, Yu,     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2010, Volume 97, Issue 18,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 111  2022影響因子:  4.0  发表年影響因子:  3.841 

    20.Effect of electron-beam irradiation on graphene field effect devices

    Childres, I, Jauregu     More...

    APPLIED PHYSICS LETTERS[0003-6951], Published 2010, Volume 97, Issue 17,

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 142  2022影響因子:  4.0  发表年影響因子:  3.841 

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