1.Self-formed interfacial oxide layer minimizes reverse bias dark current in PbS colloidal quantum dot photodiodes

Yang, Q, Huang, HW,     More...

Yang, Q, Huang, HW, Xu, G, Yuan, Y, Jiang, MT, Zhong, YN, Gao, X, Xu, JL, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2023, Volume 123, Issue 21,

收錄情况： WOS SCOPUS

2022影響因子:  4.0 

2.A hybrid memristor with oxide-polymer heterojunction

Zhang, ZD, Zhong, YN     More...

Zhang, ZD, Zhong, YN, Shen, C, Huang, HT, Lu, ZN, Xu, JL, Gao, X, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2022, Volume 121, Issue 19,

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WOS核心合集引用: 3  2022影響因子:  4.0  发表年影響因子:  4.0 

3.Enhanced carrier injection hotspot effect by direct and simple ITO surface engineering

Jiang, HH, Xiao, J,     More...

Jiang, HH, Xiao, J, Huang, HT, Wu, D, Song, RX, Xu, R, Gao, X, Xu, JL, Duhm, S, Chi, LF, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2021, Volume 118, Issue 22,

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WOS核心合集引用: 2  2022影響因子:  4.0  发表年影響因子:  3.971 

4.Visible-blind UV monitoring with a photochromic charge trapping layer in organic field-effect transistors

Lv, JJ, Gao, X, Zhan     More...

Lv, JJ, Gao, X, Zhang, LX, Feng, Y, Xu, JL, Xiao, J, Dong, B, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2019, Volume 115, Issue 11,

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WOS核心合集引用: 12  2022影響因子:  4.0  发表年影響因子:  3.597 

5.Organic thin film memcapacitors

Cai, JW, Li, LX, Xu,     More...

Cai, JW, Li, LX, Xu, C, Feng, Y, Zhong, YN, Xu, JL, Gao, X, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2019, Volume 114, Issue 4,

收錄情况： WOS SCOPUS

WOS核心合集引用: 7  2022影響因子:  4.0  发表年影響因子:  3.597 

6.Carrier injection in organic electronics:Injection hotspot effect beyond barrier reduction effect

Lu, ZH, Hu, JX, Zhon     More...

Lu, ZH, Hu, JX, Zhong, YN, Zhou, X, Xu, C, Gao, X, Xu, JL, Duhm, S, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2018, Volume 113, Issue 4,

收錄情况： WOS SCOPUS

WOS核心合集引用: 7  2022影響因子:  4.0  发表年影響因子:  3.521 

7.Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

Wang, S, Gao, X, Zho     More...

Wang, S, Gao, X, Zhong, YN, Zhang, ZD, Xu, JL, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2016, Volume 109, Issue 2,

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WOS核心合集引用: 10  2022影響因子:  4.0  发表年影響因子:  3.411 

8.Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Cui, ZQ, Wang, S, Ch     More...

Cui, ZQ, Wang, S, Chen, JM, Gao, X, Dong, B, Chi, LF, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2015, Volume 106, Issue 12,

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WOS核心合集引用: 12  2022影響因子:  4.0  发表年影響因子:  3.142 

9.Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

Liu, J, Liu, CH, She     More...

Liu, J, Liu, CH, She, XJ, Sun, QJ, Gao, X, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2014, Volume 105, Issue 16,

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WOS核心合集引用: 20  2022影響因子:  4.0  发表年影響因子:  3.302 

10.Spatial profile of charge storage in organic field-effect transistor nonvolatile memory using polymer electret

She, XJ, Liu, J, Zha     More...

She, XJ, Liu, J, Zhang, JY, Gao, X, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2013, Volume 103, Issue 14,

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WOS核心合集引用: 21  2022影響因子:  4.0  发表年影響因子:  3.515 

11.Operational stability enhancement of low-voltage organic field-effect transistors based on bilayer polymer dielectrics

She, XJ, Liu, J, Zha     More...

She, XJ, Liu, J, Zhang, JY, Gao, X, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2013, Volume 103, Issue 13,

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WOS核心合集引用: 30  2022影響因子:  4.0  发表年影響因子:  3.515 

12.Probing bias stress effect and contact resistance in bilayer ambipolar organic field-effect transistors

Yan, Y, Sun, QJ, Gao     More...

Yan, Y, Sun, QJ, Gao, X, Deng, P, Zhang, Q, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2013, Volume 103, Issue 7,

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WOS核心合集引用: 13  2022影響因子:  4.0  发表年影響因子:  3.515 

13.Low-temperature solution-processed alumina as gate dielectric for reducing the operating-voltage of organic field-effect transistors

Peng, J, Sun, QJ, Wa     More...

Peng, J, Sun, QJ, Wang, SD, Wang, HQ, Ma, WL     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2013, Volume 103, Issue 6,

收錄情况： WOS SCOPUS

WOS核心合集引用: 31  2022影響因子:  4.0  发表年影響因子:  3.515 

14.Elucidation of ambient gas effects in organic nano-floating-gate nonvolatile memory

She, XJ, Liu, CH, Zh     More...

She, XJ, Liu, CH, Zhang, JY, Gao, X, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2013, Volume 102, Issue 5,

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WOS核心合集引用: 14  2022影響因子:  4.0  发表年影響因子:  3.515 

15.Organic field-effect transistor nonvolatile memories based on hybrid nano-floating-gate

Gao, X, She, XJ, Liu     More...

Gao, X, She, XJ, Liu, CH, Sun, QJ, Liu, J, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2013, Volume 102, Issue 2,

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WOS核心合集引用: 39  2022影響因子:  4.0  发表年影響因子:  3.515 

16.Efficiency enhancement utilizing hybrid charge generation layer in tandem organic light-emitting diodes

Xiao, J, Wang, XX, Z     More...

Xiao, J, Wang, XX, Zhu, H, Gao, X, Yang, ZH, Zhang, XH, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2012, Volume 101, Issue 1,

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WOS核心合集引用: 28  2022影響因子:  4.0  发表年影響因子:  3.794 

17.High performance single In2Se3 nanowire photodetector

Li, QL, Li, Y, Gao,     More...

Li, QL, Li, Y, Gao, J, Wang, SD, Sun, XH     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 24,

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WOS核心合集引用: 77  2022影響因子:  4.0  发表年影響因子:  3.844 

18.Surface roughening evolution in pentacene thin film growth

Zhu, H, Li, QL, She,     More...

Zhu, H, Li, QL, She, XJ, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 98, Issue 24,

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WOS核心合集引用: 18  2022影響因子:  4.0  发表年影響因子:  3.844 

19.Charge accumulation dynamics in organic thin film transistors

Chen, XY, Zhu, H, Wa     More...

Chen, XY, Zhu, H, Wang, SD     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2010, Volume 97, Issue 24,

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WOS核心合集引用: 7  2022影響因子:  4.0  发表年影響因子:  3.841 

20.Understanding contact behavior in organic thin film transistors

Wang, SD, Yan, Y, Ts     More...

Wang, SD, Yan, Y, Tsukagoshi, K     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2010, Volume 97, Issue 6,

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WOS核心合集引用: 61  2022影響因子:  4.0  发表年影響因子:  3.841