1.Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors erg
Xu, G, Lin, MF, Mao,
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Xu, G, Lin, MF, Mao, BH, Shimizu, M, Mitoma, N, Kizu, T, Wei, OY, Nabatame, T, Zhi, L, Tsukagoshi, K, Wang, SD
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JOURNAL OF PHYSICS D-APPLIED PHYSICS[0022-3727],
Published 2017,
Volume 50,
Issue 2,
收錄情况:
WOS
SCOPUS
WOS核心合集引用: 6
2023影響因子:
3.1
发表年影響因子:
2.373