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    1.Etching Behavior of silicon nanowires with HF and NH4F and surface characterization by attenuated total reflection Fourier transform infrared spectroscopy: Similarities and differences between one-dimensional and two-dimensional silicon surfaces

    Chen, WW, Sun, XH, W     More...

    JOURNAL OF PHYSICAL CHEMISTRY B[1520-6106], Published 2005, Volume 109, Issue 21, Pages 10871-10879

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 28  2023影響因子:  2.8  发表年影響因子:  4.033 

    2.Molecular orientation and film morphology of pentacene on native silicon oxide surface

    Wang, SD, Dong, X, L     More...

    JOURNAL OF PHYSICAL CHEMISTRY B[1520-6106], Published 2005, Volume 109, Issue 20, Pages 9892-9896

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 35  2023影響因子:  2.8  发表年影響因子:  4.033 

    3.Orderly growth of copper phthalocyanine on highly oriented pyrolytic graphite (HOPG) at high substrate temperatures

    Wang, SD, Dong, X, L     More...

    JOURNAL OF PHYSICAL CHEMISTRY B[1520-6106], Published 2004, Volume 108, Issue 5, Pages 1529-1532

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 53  2023影響因子:  2.8  发表年影響因子:  3.834 

    4.Three-dimensional etching profiles and surface speciations (via attenuated total reflection-fourier transform infrared spectroscopy) of silicon nanowires in NH 4F-buffered HF solutions: A double passivation model

    Teo, Boon K., Chen,     More...

    Journal of Physical Chemistry B[1520-6106], Published 2005, Volume 109, Issue 46, Pages 21716-21724

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 16  2023影響因子:  2.8  发表年影響因子:  4.033 

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