王雪靜
材料科學與工程系
ORCID: 0000-0002-3744-2932
成果: 75 件 | 合作者:257
WOS核心合集引用:1360 | H Index:22 | WOS收錄:64
CNKI收錄:0 | SCOPUS收錄:64
論文: 67 | 科研項目:2 | 專利:6
1.Structural alignment of ZnO columns across multiple monolayer MoS2 layers as compliant substrates
Wang, XJ, Kim, K, De More...
NANOSCALE[2040-3364], Published 2024, Volume 16, Issue 23, Pages 11156-11162
收錄情况: WOS SCOPUS
WOS核心合集引用: 0 2023影響因子: 5.8
Lee, Y, Ahmed, T, Wa More...
APL MATERIALS[2166-532X], Published 2024, Volume 12, Issue 3,
收錄情况: WOS SCOPUS
WOS核心合集引用: 0 2023影響因子: 5.3
Wang, XJ, Choi, J, Y More...
NANO CONVERGENCE[2196-5404], Published 2023, Volume 10, Issue 1,
收錄情况: WOS SCOPUS
WOS核心合集引用: 2 2023影響因子: 13.5 发表年影響因子: 13.5
4.Evidence of hexagonal germanium grains on annealed monolayer MoS2
Wang, XJ, Kaufmann, More...
MATERIALS TODAY ADVANCES[2590-0498], Published 2023, Volume 19,
收錄情况: WOS SCOPUS
WOS核心合集引用: 1 2023影響因子: 8.1 发表年影響因子: 8.1
Lu, JJ, Zhang, D, Pa More...
MATERIALS HORIZONS[2051-6347], Published 2023, Volume 10, Issue 8, Pages 3101-3113
收錄情况: WOS SCOPUS
WOS核心合集引用: 5 2023影響因子: 12.2 发表年影響因子: 12.2
6.Enhanced Exciton-to-Trion Conversion by Proton Irradiation of Atomically Thin WS2
Wang, XJ, Pettes, MT More...
NANO LETTERS[1530-6984], Published 2023, Volume 23, Issue 9, Pages 3754-3761
收錄情况: WOS SCOPUS
WOS核心合集引用: 5 2023影響因子: 9.6 发表年影響因子: 9.6
7.Origin of Topological Hall-Like Feature in Epitaxial SrRuO3 Thin Films
Roy, P, Carr, A, Zho More...
ADVANCED ELECTRONIC MATERIALS[2199-160X], Published 2023, Volume 9, Issue 6,
收錄情况: WOS SCOPUS
WOS核心合集引用: 4 2023影響因子: 5.3 发表年影響因子: 5.3
8.Direct growth of crystalline SiGe nanowires on superconducting NbTiN thin films
Wang, XJ, Thomas, SM More...
NANOTECHNOLOGY[0957-4484], Published 2023, Volume 34, Issue 15,
收錄情况: WOS SCOPUS
WOS核心合集引用: 0 2023影響因子: 2.9 发表年影響因子: 2.9
9.Heterogeneous Integration of Freestanding Bilayer Oxide Membrane for Multiferroicity
Kang, KT, Corey, ZJ, More...
ADVANCED SCIENCE[2198-3844], Published 2023, Volume 10, Issue 15,
收錄情况: WOS SCOPUS
WOS核心合集引用: 6 2023影響因子: 14.3 发表年影響因子: 14.3
10.Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure
Wang, XJ, Lin, YC, T More...
APL MATERIALS[2166-532X], Published 2022, Volume 10, Issue 11,
收錄情况: WOS SCOPUS
WOS核心合集引用: 0 2023影響因子: 5.3 发表年影響因子: 6.1
Haiyan Wang, Xuejing More...
專利權人: Purdue Research Foun More...
申請號: US17791980 申請日: 2021-02-04
公開(公告)號: US20230047636A1 公開(公告)日期: 2023-02-16
IPC分類號: B81C1/00
法律狀態: 实质审查
同族信息: US62970948P0; WO2021158816A1; US20230047636A1
Wang Haiyan, Wang Xu More...
專利權人: Purdue Research Foun More...
申請號: WOUS21016657 申請日: 2021-02-04
公開(公告)號: WO2021158816A1 公開(公告)日期: 2021-08-12
IPC分類號: B82Y20/00; B81C1/00; B82B1/00; B82Y30/00; B82Y40/00
法律狀態: 未进入国家阶段-PCT有效期满
同族信息: US62970948P0; WO2021158816A1; US20230047636A1
3.METHOD OF FABRICATING METAL-NITRIDE VERTICALLY ALIGNED NANOCOMPOSITES
Haiyan Wang, Xuejing More...
專利權人: Purdue Research Foun More...
申請號: US17134340 申請日: 2020-12-26
公開(公告)號: US20210214857A1 公開(公告)日期: 2021-07-15
IPC分類號: C30B29/60; C30B23/02; C30B23/06; C30B29/02; C30B29/38; G02B1/00; G02B5/00
法律狀態: 实质审查
同族信息: US62959944P0; WO2021141787A1; US20210214857A1
4.METHOD OF FABRICATING METAL-NITRIDE VERTICALLY ALIGNED NANOCOMPOSITES
Wang Haiyan, Wang Xu More...
專利權人: Purdue Research Foun More...
申請號: WOUS20067063 申請日: 2020-12-26
公開(公告)號: WO2021141787A1 公開(公告)日期: 2021-07-15
IPC分類號: C23C14/28; C23C14/06; G02B5/00
法律狀態: 未进入国家阶段-PCT有效期满
同族信息: US62959944P0; WO2021141787A1; US20210214857A1
Xinghang Zhang, Xuej More...
專利權人:
申請號: US62970948 申請日: 2020-02-06
公開(公告)號: US62970948P0
法律狀態: 期限届满
同族信息: US62970948P0; WO2021158816A1; US20230047636A1
6.METHOD OF FABRICATING METAL-NITRIDE VERTICALLY ALIGNED NANOCOMPOSITES
Xinghang Zhang, Haiy More...
專利權人:
申請號: US62959944 申請日: 2020-01-11
公開(公告)號: US62959944P0
法律狀態: 期限届满
同族信息: WO2021141787A1; US20210214857A1; US62959944P0
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