1.Integrated MoSe2 with n(+)p-Si photocathodes for solar water splitting with high efficiency and stability

Huang, GP, Mao, J, F     More...

Huang, GP, Mao, J, Fan, RL, Yin, ZH, Wu, X, Jie, JS, Kang, ZH, Shen, MR     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2018, Volume 112, Issue 1,

收錄情况： WOS SCOPUS

WOS核心合集引用: 30  2023影響因子:  3.5  发表年影響因子:  3.521 

2.Schottky solar cells based on graphene nanoribbon/multiple silicon nanowires junctions

Xie, C, Jie, JS, Nie     More...

Xie, C, Jie, JS, Nie, BA, Yan, TX, Li, Q, Lv, P, Li, FZ, Wang, MZ, Wu, CY, Wang, L, Luo, LB     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2012, Volume 100, Issue 19,

收錄情况： WOS SCOPUS

WOS核心合集引用: 65  2023影響因子:  3.5  发表年影響因子:  3.794 

3.Monolayer graphene film/silicon nanowire array Schottky junction solar cells

Xie, C, Lv, P, Nie,     More...

Xie, C, Lv, P, Nie, BA, Jie, JS, Zhang, XW, Wang, Z, Jiang, P, Hu, ZZ, Luo, LB, Zhu, ZF, Wang, L, Wu, CY     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 99, Issue 13,

收錄情况： WOS SCOPUS

WOS核心合集引用: 118  2023影響因子:  3.5  发表年影響因子:  3.844 

4.Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity

Peng, QA, Jie, JS, X     More...

Peng, QA, Jie, JS, Xie, C, Wang, L, Zhang, XW, Wu, D, Yu, YQ     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2011, Volume 98, Issue 12,

收錄情况： WOS SCOPUS

WOS核心合集引用: 35  2023影響因子:  3.5  发表年影響因子:  3.844 

5.High-performance CdS:P nanoribbon field-effect transistors constructed with high-kappa dielectric and top-gate geometry

Wu, D, Jiang, Y, Wan     More...

Wu, D, Jiang, Y, Wang, L, Li, SY, Wu, B, Lan, XZ, Yu, YQ, Wu, CY, Wang, ZB, Jie, JS     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2010, Volume 96, Issue 12,

收錄情况： WOS SCOPUS

WOS核心合集引用: 37  2023影響因子:  3.5  发表年影響因子:  3.841 

6.Silicon nanowires for rechargeable lithium-ion battery anodes

Peng, KQ, Jie, JS, Z     More...

Peng, KQ, Jie, JS, Zhang, WJ, Lee, ST     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2008, Volume 93, Issue 3,

收錄情况： WOS SCOPUS

WOS核心合集引用: 390  2023影響因子:  3.5  发表年影響因子:  3.726 

7.Silicon nanowire sensors for Hg2+ and Cd2+ ions

Luo, LB, Jie, JS, Zh     More...

Luo, LB, Jie, JS, Zhang, WF, He, ZB, Wang, JX, Yuan, GD, Zhang, WJ, Wu, LCM, Lee, ST     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2009, Volume 94, Issue 19,

收錄情况： WOS SCOPUS

WOS核心合集引用: 82  2023影響因子:  3.5  发表年影響因子:  3.554 

8.Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode

Zhang, WF, Jie, JS,     More...

Zhang, WF, Jie, JS, He, ZB, Tao, SL, Fan, X, Zhou, YC, Yuan, GD, Luo, LB, Zhang, WJ, Lee, CS, Lee, ST     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2008, Volume 92, Issue 15,

收錄情况： WOS SCOPUS

WOS核心合集引用: 27  2023影響因子:  3.5  发表年影響因子:  3.726 

9.Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device

Zhang, WF, Jie, JS,     More...

Zhang, WF, Jie, JS, Luo, LB, Yuan, GD, He, ZB, Yao, ZQ, Chen, ZH, Lee, CS, Zhang, WJ, Lee, ST     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2008, Volume 93, Issue 18,

收錄情况： WOS SCOPUS

WOS核心合集引用: 11  2023影響因子:  3.5  发表年影響因子:  3.726 

10.Transport properties of single-crystal CdS nanoribbons

Jie, JS, Zhang, WJ,     More...

Jie, JS, Zhang, WJ, Jiang, Y, Lee, ST     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2006, Volume 89, Issue 22,

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WOS核心合集引用: 50  2023影響因子:  3.5  发表年影響因子:  3.977 

11.Single-crystal CdSe nanoribbon field-effect transistors and photoelectric applications

Jie, JS, Zhang, WJ,     More...

Jie, JS, Zhang, WJ, Jiang, Y, Lee, ST     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2006, Volume 89, Issue 13,

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WOS核心合集引用: 65  2023影響因子:  3.5  发表年影響因子:  3.977 

12.Synthesis and optical properties of well-aligned ZnO nanorod array on an undoped ZnO film

Jie, JS, Wang, GZ, C     More...

Jie, JS, Wang, GZ, Chen, YM, Han, XH, Wang, QT, Xu, B, Hou, JG     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2005, Volume 86, Issue 3, Pages 1-3

收錄情况： WOS SCOPUS

WOS核心合集引用: 169  2023影響因子:  3.5  发表年影響因子:  4.127 

13.High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors

Zhang, WF, He, ZB, Y     More...

Zhang, WF, He, ZB, Yuan, GD, Jie, JS, Luo, LB, Zhang, XJ, Chen, ZH, Lee, CS, Zhang, WJ, Lee, ST     Less

APPLIED PHYSICS LETTERS[0003-6951], Published 2009, Volume 94, Issue 12,

收錄情况： WOS SCOPUS

WOS核心合集引用: 39  2023影響因子:  3.5  发表年影響因子:  3.554