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    1.Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction

    Wu, D, Guo, JW, Du,     More...

    ACS NANO[1936-0851], Published 2019, Volume 13, Issue 9, Pages 9907-9917

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 480  2023影響因子:  15.8  发表年影響因子:  14.588 

    2.Dual-Band, High-Performance Phototransistors from Hybrid Perovskite and Organic Crystal Array for Secure Communication Applications

    Xu, XZ, Deng, W, Zha     More...

    ACS NANO[1936-0851], Published 2019, Volume 13, Issue 5, Pages 5910-5919

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 75  2023影響因子:  15.8  发表年影響因子:  14.588 

    3.Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II-VI Nanostructures

    Xia, FF, Shao, ZB, H     More...

    ACS NANO[1936-0851], Published 2016, Volume 10, Issue 11, Pages 10283-10293

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 34  2023影響因子:  15.8  发表年影響因子:  13.942 

    4.High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors

    Zhang, HB, Zhang, XJ     More...

    ACS NANO[1936-0851], Published 2016, Volume 10, Issue 5, Pages 5113-5122

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 323  2023影響因子:  15.8  发表年影響因子:  13.942 

    5.Solution-Processed Graphene Quantum Dot Deep-UV Photodetectors

    Zhang, Q, Jie, JS, D     More...

    ACS NANO[1936-0851], Published 2015, Volume 9, Issue 2, Pages 1561-1570

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 243  2023影響因子:  15.8  发表年影響因子:  13.334 

    6.Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation

    Wu, Di, Guo, Jiawen,     More...

    ACS Nano[1936-0851], Published 2021, Volume 15, Issue 6, Pages 10119-10129

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 324  2023影響因子:  15.8  发表年影響因子:  18.027 

    7.High-Luminance Microsized CH3NH3PbBr3Single-Crystal-Based Light-Emitting Diodes via a Facile Liquid-Insulator Bridging Route

    Zhang, Huanyu, Yu, T     More...

    ACS Nano[1936-0851], Published 2022, Volume 16, Issue 4, Pages 6394-6403

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 18  2023影響因子:  15.8  发表年影響因子:  17.1 

    8.In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio

    Wu, Di, Xu, Mengmeng     More...

    ACS Nano[1936-0851], Published 2022, Volume 16, Issue 4, Pages 5545-5555

    收錄情况: WOS SCOPUS

    WOS核心合集引用: 205  2023影響因子:  15.8  发表年影響因子:  17.1 

    9.Topology-Mediated Molecule Nucleation Anchoring Enables Inkjet Printing of Organic Semiconducting Single Crystals for High-Performance Printed Electronics

    Ren, XB, Qiu, FQ, De     More...

    ACS NANO[1936-0851], Published 2023, Volume 17, Issue 24, Pages 25175-25184

    收錄情况: WOS SCOPUS

    WOS核心合集引用:  2023影響因子:  15.8  发表年影響因子:  15.8 

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